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IGP01N120H2 IGD01N120H2
HighSpeed 2-Technology
C
*
Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A
2 nd
G
E
*
PG-TO-252-3-1
PG-TO-220-3-1
* Qualified according to JEDEC for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGP01N120H2 IGD01N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25C, f = 140kHz TC = 100C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature PG-TO-252: Reflow soldering, MSL3 Others: wavesoldering, 1.6 mm (0.063 in.) from case for 10s Tj , Tstg 260 260 -40...+150 C VGE Ptot 20 28 V W ICpul s Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V IC 1A 1A Eoff 0.09mJ 0.09mJ Tj 150C 150C Marking G01H1202 G01H1202 Package PG-TO-220-3-1 PG-TO-252-3-11
2
J-STD-020 and JESD-022 1 Rev. 2.4 Sept. 07
Power Semiconductors
IGP01N120H2 IGD01N120H2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB
1)
Symbol RthJC RthJA RthJA
Conditions
Max. Value 4.5
Unit K/W
PG-TO-220-3-1 PG-TO-252-3-1
62 50
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 3 00 A VCE(sat) V G E = 15 V , I C = 1 A T j =2 5 C T j =1 5 0 C V G E = 10 V , I C = 1 A, T j =2 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 A , V C E = V G E V C E = 12 0 0V , V G E = 0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =1 A V G E = 15 V 7 nH 91.6 9.8 3.4 8.6 nC pF IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 1 A 0.75 20 80 40 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 A 1200 V Symbol Conditions Value min. Typ. max. Unit
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air.
1)
2
Power Semiconductors
2
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1 , 2) L =1 8 0n H, 2) C = 4 0p F Energy losses include 3) "tail" and diode reverse recovery. 13 6.3 370 28 0.08 0.06 0.14 mJ ns Symbol Conditions Value min. Typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1 , 2) L =1 8 0n H, 2) C = 4 0p F Energy losses include 4) "tail" and diode reverse recovery. 12 8.9 450 43 0.11 0.09 0.2 mJ ns Symbol Conditions Value min. Typ. max. Unit
Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Eoff V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1 , C r =1 nF T j =2 5 C T j =1 5 0 C 0.02 0.044 2)
Symbol
Conditions
Value min. Typ. max.
Unit
mJ
2) 4)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E Commutation diode from device IKP01N120H2 3 Rev. 2.4 Sept. 07
Power Semiconductors
IGP01N120H2 IGD01N120H2
5A
10A
Ic
IC, COLLECTOR CURRENT
1A
t p =1s
4A
2s 5s
IC, COLLECTOR CURRENT
3A TC=80C 2A TC=110C
20s 0,1A 50s
1A
Ic
100Hz 1kHz 10kHz 100kHz
200s ,01A DC 1V 10V 100V 1000V
0A 10Hz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 241)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
30W
4A
25W
20W
15W
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
3A
2A
10W
1A
5W
0W 25C
50C
75C
100C
125C
150C
0A 25C
50C
75C
100C
125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
5A 5A
4A
4A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
VGE=15V 3A 12V 10V 8V 6V
VGE=15V 3A 12V 10V 8V 6V
2A
2A
1A
1A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
5A
4V
4A
Tj=+150C Tj=+25C
IC, COLLECTOR CURRENT
3V
IC=2A
3A
IC=1A 2V IC=0.5A 1V
2A
1A
0A 3V
5V
7V
9V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
1000ns
td(off)
td(off) 100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns tf
tf
10ns
td(on)
td(on) 10ns tr 0A 1A 2A
tr 1ns 50
100
150
200
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 241, dynamic test circuit in Fig.E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 1A, dynamic test circuit in Fig.E)
6V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5V
t, SWITCHING TIMES
100ns
4V
tf
3V
max. typ. min.
2V
td(on) 10ns tr 50C 100C 150C
1V
0C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 1A, RG = 241, dynamic test circuit in Fig.E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.03mA)
Power Semiconductors
6
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
0.6mJ
1
) Eon and Ets include losses due to diode recovery.
0.25mJ
Ets
1
1
) Eon and Ets include losses due to diode recovery.
Ets
1
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.20mJ
0.4mJ Eoff
0.15mJ Eon 0.10mJ
1
Eon 0.2mJ
1
0.0mJ 0A 1A 2A 3A
Eoff 0.05mJ 50 100 150 200
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 241, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 1A, dynamic test circuit in Fig.E )
0.25mJ
1
E, SWITCHING ENERGY LOSSES
0.20mJ
Ets
1
Eoff, TURN OFF SWITCHING ENERGY LOSS
) Eon and Ets include losses due to diode recovery.
0.06mJ IC=1A, TJ=150C
0.04mJ IC=1A, TJ=25C IC=0.3A, TJ=150C 0.02mJ
0.15mJ
1
0.10mJ
Eon
0.05mJ
Eoff
IC=0.3A, TJ=25C 0.00mJ 0V/us
0.00mJ
-40C
25C
100C
150C
1000V/us
2000V/us
3000V/us
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 1A, RG = 241, dynamic test circuit in Fig.E )
dv/dt, VOLTAGE SLOPE Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E)
Power Semiconductors
7
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
20V
D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE
0.1 0.05 0.02 10 K/W 0.01
-1
R,(K/W) 2.5069 1.1603 0.8327
R1
, (s) 0.00066 0.00021 0.00426
R2
VGE, GATE-EMITTER VOLTAGE
10 K/W
0
0.2
15V
UCE=240V
10V
UCE=960V
5V
single pulse 10 K/W 1s
-2
C 1 = 1 / R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms
100ms
0V 0nC
5nC
10nC
15nC
tp, PULSE WIDTH Figure 17. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
QGE, GATE CHARGE Figure 18. Typical gate charge (IC = 1A)
1000V 1.0A
VCE, COLLECTOR-EMITTER VOLTAGE
100pF
Ciss
800V
600V
0.6A
400V
0.4A
10pF
Coss
0.2A 200V 0.0A 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Crss 0V 10V 20V 30V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
tp, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (VGE=15/0V, RG=220, Tj = 150C, Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2.4 Sept. 07
ICE COLLECTOR CURRENT
0.8A
C, CAPACITANCE
IGP01N120H2 IGD01N120H2
1000V 1.0A
VCE, COLLECTOR-EMITTER VOLTAGE
800V
600V
0.6A
400V
0.4A
0.2A 200V 0.0A 0V 0.0 0.4 0.8 1.2 1.6 2.0
tp, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=220, Tj = 150C, Dynamic test circuit in Figure E)
Power Semiconductors
ICE COLLECTOR CURRENT 9
0.8A
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
PG-TO220-3-1
Power Semiconductors
10
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
P-TO252-3-11
Power Semiconductors
11
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
1/2 L oo DUT (Diode) VDC RG DUT (IGBT) L C Cr
1/2 L
Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor Cr = 1nF (only for ZVT switching) Figure B. Definition of switching losses
Power Semiconductors
12
Rev. 2.4 Sept. 07
IGP01N120H2 IGD01N120H2
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 9/13/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.4 Sept. 07

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